SI1913EDH trenchfet power mosfets: 1.8-v rated esd protected: 3000 v thermally enhanced sc-70 package
load switching pa switch level switch v ds (v) r ds(on) ( ) i d (a) 0.490 @ v gs = ?4.5 v ?1.0 ?20 0.750 @ v gs = ?2.5 v ?0.81 1.10 @ v gs = ?1.8 v ?0.67 marking code da xx lot traceability and date code part # code yy d s g 3 k sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view s 1 g 1 d 2 d 1 g 2 s 2 d s g 3 k
parameter symbol 5 secs steady state unit drain-source voltage v ds ?20 gate-source voltage v gs 12 v a t a = 25 c ?1.0 ?0.88 continuous drain current (t j = 150 c) a t a = 85 c i d ?0.72 ?0.63 pulsed drain current i dm ?3 a continuous diode current (diode conduction) a i s ?0.61 ?0.48 t a = 25 c 0.74 0.57 maximum power dissipation a t a = 85 c p d 0.38 0.30 w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol typical maximum unit t 5 sec 130 170 maximum junction-to-ambient a steady state r thja 170 220 c/w maximum junction-to-foot (drain) steady state r thjf 80 100 c/w notes a. surface mounted on 1? x 1? fr4 board. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 100 a ? 0.45 v v ds = 0 v, v gs = 4.5 v 1.5 a gate-body leakage i gss v ds = 0 v, v gs = 12 v 10 ma v ds = ? 16 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v, t j = 85 c ? 5 a on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 4.5 v ? 2 a v gs = ? 4.5 v, i d = ? 0.88 a 0.400 0.490 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 0.71 a 0.610 0.750 ds(on) v gs = ? 1.8 v, i d = ? 0.2 a 0.850 1.10 forward transconductance a g fs v ds = ? 10 v, i d = ? 0.88 a 1.5 s diode forward voltage a v sd i s = ? 0.47 a, v gs = 0 v ? 0.85 ? 1.2 v dynamic b total gate charge q g 1.2 1.8 gate-source charge q gs v ds = ? 10 v, v gs = ? 4.5 v, i d = ? 0.88 a 0.3 nc gate-drain charge q gd 0.3 turn-on delay time t d(on) 0.150 0.23 rise time t r v dd = ? 10 v, r l = 20 0.480 0.72 turn-off delay time t d(off) v dd = ? 10 v, r l = 20 i d ? 0.5 a, v gen = ? 4.5 v, r g = 6 0.840 1.2 s fall time t f 0.850 1.2 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI1913EDH product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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